The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 1999

Filed:

Feb. 21, 1997
Applicant:
Inventors:

Ron van Os, Sunnyvale, CA (US);

William J Durbin, Capitola, CA (US);

Richard H Matthiesen, San Jose, CA (US);

Dennis C Fenske, Felton, CA (US);

Eric D Ross, Santa Cruz, CA (US);

Assignee:

Watkins-Johnson Company, Palo Alto, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C / ; C03C / ;
U.S. Cl.
CPC ...
216 67 ; 427569 ; 2041921 ; 438714 ; 438729 ; 438758 ;
Abstract

A plasma enhanced chemical processing reactor and method. The reactor includes a plasma chamber including a first gas injection manifold and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wafer support and a second gas manifold. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support, applying r.f. gradient to induce diffusion of the plasma to the area proximate the wafer support, and exhausting the reactor in a substantially symmetrical manner.

Published as:
TW283250B; WO9703224A1; KR970008401A; JPH09167762A; EP0839217A1; CN1189859A; US5792272A; US6001267A; KR100241171B1; US6178918B1; EP0839217A4; US6375750B1; CN1160479C; JP3701390B2; EP0839217B1; ATE331053T1; DE69636286D1; DE69636286T2;

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