The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1999
Filed:
Aug. 15, 1996
Shin-Etsu Handotai Co., Ltd., , JP;
Abstract
Proposed is an improvement in the process for the preparation of an SOI wafer comprising the steps of: forming an oxidized surface film on the mirror-polished surface of a first mirror-polished semiconductor silicon wafer as the base wafer; forming a doped layer with a dopant in a high concentration on the mirror-polished surface of a second mirror-polished semiconductor silicon wafer as the bond wafer; bringing the base wafer and the bond wafer into contact each with the other at the oxidized surface film and the doped layer; and subjecting the thus contacted semiconductor silicon wafers to a heat treatment to effect integral bonding thereof into a precursor of an SOI wafer. The improvement of the invention is accomplished by polishing the surface of the doped layer on the bond wafer before the base wafer and the bond wafer are joined by contacting at the oxidized surface film and the doped layer so that a great improvement can be obtained in the bonding strength between layers.