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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5997950 B1

PDFFull Text
Date of Patent:
Dec. 07, 1999

Filed:

May. 27, 1997

Substrate having uniform tungsten silicide film and method of manufacture

Applicant:
Inventors:

Susan G Telford, Untergruppenbach, DE;

Meng Chu Tseng, Saratoga, CA (US);

Michio Aruga, Inba-gun, JP;

Klaus-Dieter Rinnen, Palo Alto, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:

Janah & Associates

Primary Examiner:

Shrive Beck

Assistant Examiner:

Bret Chen

Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
427255392 ; 438683 ;
Abstract

A tungsten silicide film is deposited on a substrate from a premixed deposition gas mixture comprising: (i) silicon source gas, such as SiCl.sub.2 H.sub.2 and (ii) tungsten source gas, such as WF.sub.6. A seeding gas, such as silane, is used during the initial deposition stages to deposit a substantially uniform interfacial WSi.sub.x layer on the substrate, so that the tungsten to silicon ratio of the WSi.sub.x layer is substantially uniform through the thickness of the WSi.sub.x film. An apparatus for performing the process is also described.

Find Patent Forward Citations

Telford, Susan. (1999). Substrate having uniform tungsten silicide film and method of manufacture (U.S. Patent No. 5997950). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5997950

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