The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 1999
Filed:
Jun. 04, 1998
Hsiang-Lin Lin, Taipei, TW;
Han-Chung Chen, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A new method of metal deposition with reduced metal residue after metal etching by cooling the wafer before metal deposition is described. A first patterned conducting layer is provided overlying a dielectric layer on the surface of a semiconductor substrate. The wafer is cooled to a temperature of less than about 20.degree. C. Thereafter, a metal layer is deposited overlying the first patterned conducting layer. The metal layer is etched away where it is not covered by a mask to complete formation of the metal line. Cooling of the wafer before metal deposition decreases the metal residue found after metal etching.