The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 1999
Filed:
Jan. 31, 1997
Michael S Ameen, Phoenix, AZ (US);
Joseph T Hillman, Scottsdale, AZ (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A titanium/titanium nitride film stack can be formed with reduced amounts of impurity by depositing onto a substrate a film of titanium using plasma-enhanced chemical vapor deposition of titanium tetrachloride and hydrogen. This film is then subjected to a hydrogen/argon plasma which significantly reduces the chlorine content of the titanium film. The titanium film can then be subjected to an ammonia plasma which will form a thin layer of titanium nitride which is then coated with a thick layer of titanium nitride using plasma-enhanced chemical vapor deposition of titanium tetrachloride and ammonia. The hydrogen/argon anneal significantly reduces the chlorine content of the titanium film and thus the chlorine content at the titanium substrate interface, particularly when the substrate contains aluminum. This enhances the overall reliability of the formed product.