The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1999
Filed:
Jan. 13, 1997
Fwu-Iuan Hshieh, Saratoga, CA (US);
Koon Chong So, San Jose, CA (US);
True-Lon Lin, Cupertino, CA (US);
MegaMOS Corporation, San Jose, CA (US);
Abstract
The present invention includes a substrate of a first conductivity type having a top surface including at least two intersecting trenches disposed therein with an insulating layer lining the trenches and a conductive material filling the trenches. The transistor also includes a source region of the first conductivity type extending from the top surface of the substrate adjacent to the trenches toward the substrate. The transistor further has a body region of a second conductivity type of opposite polarity from the first conductivity type, the body region extends from the top surface adjacent from the trenches to the substrate and surrounding the source region. The conductive material filling the trenches including punch-through suppressing blocks covering corners of the cell defined by the intersecting trenches wherein the source region disposed underneath the corners immediately next to the trenches having a lower net concentration of impurities of the first conductivity type than remaining portion of the source region.