The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 1999
Filed:
Jan. 27, 1997
Yuan-Chang Huang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company Ltd., Hsin-Chu, TW;
Abstract
A new method of metallization using a dimple free tungsten plug is described. An insulating layer is deposited overlying semiconductor device structures. An opening is etched through the insulating layer to contact one of the semiconductor device structures. A layer of tungsten is deposited overlying the insulating layer and within the opening. A photoresist block is formed on the tungsten layer over the contact opening. The photoresist block is a reverse pattern of the photoresist layer used to define the opening in the insulating layer. The tungsten layer is partially etched forming a mound in the tungsten layer under the photoresist block and over the opening. The photoresist block is removed and the remaining tungsten layer is etched again resulting in the formation of a dimple free tungsten plug with a planar surface.