The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1999
Filed:
Oct. 10, 1997
Koichiro Ohira, Kawasaki, JP;
Katsuyuki Karakawa, Kawasaki, JP;
Kazutoshi Izumi, Kawasaki, JP;
Masahiko Doki, Kawasaki, JP;
Fujitsu Ltd., Kanagawa, JP;
Abstract
A method of manufacturing a semiconductor device has the steps of: forming a wiring pattern by dry etching a wiring layer on a semiconductor substrate, using a resist pattern as a mask; immersing the wiring pattern in amine containing liquid to remove deposition residues formed during the dry etching; then, processing the wiring pattern with fluid not containing amine and being capable of removing deposition residues; forming a conformal insulating layer on the processed wiring pattern; and forming an insulating layer having a planarizing function on the conformal insulating layer by CVD. This method is suitable for multi-layer wiring, and can form an interlayer insulating film having a satisfactory planarizing function.