The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1999
Filed:
Jul. 09, 1997
Abstract
The present invention relates to a method of manufacturing MOS components having lightly doped drains wherein the implanting type ion used is different than that used in the formation of the source/drain regions. The present invention also includes the use of a tilt implantation angle accompanied by substrate rotation during the implantation process to form lightly doped drain structures on two sides of the source/drain regions. The mask is the same for the formation of the source/drain regions as that for the formation of the lightly doped drain regions. The method of manufacturing MOS components having lightly doped drains according to this invention has fewer manufacturing processes for the formation of spacers than the conventional methods. Moreover, the reduction in spacer production results in an increased contact surface area for subsequent contact window formation, thereby lowering contact resistance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile