The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1999
Filed:
Apr. 08, 1998
Shih-Ming Lan, Chang Hwa, TW;
United Silicon Incorporated, Hsinchu, TW;
Abstract
A method of fabricating a shallow trench isolation. On a substrate comprising a pad oxide layer and a mask layer on the pad oxide layer, a trench which penetrates through the mask layer, the pad oxide layer, and a part of the substrate is formed. A part of the mask layer is removed to form an opening on top of the trench, wherein the opening is wider than the trench. An insulation layer is formed on the mask layer to fill the opening and the trench. The insulation layer is etched until the mask layer is exposed. The mask layer is removed, so that a T-shape insulation plug is formed. The insulation plug and the pad oxide layer are etched until the insulation plug and the substrate are at a same level.