The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 1999

Filed:

Dec. 17, 1996
Applicant:
Inventors:

Brett E Huff, Fremont, CA (US);

Farhad K Moghadom, Los Gatos, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438669 ; 438677 ; 438656 ; 438685 ;
Abstract

A method for improving interlayer dielectric to metal layer adhesion including an in-situ plasma treatment process. A metal layer which is formed on a substrate is treated with plasma prior to the deposition of the interlayer dielectric. The interlayer dielectric is deposited above the metal layer and contacts are formed through the interlayer dielectric which electrically connect the underlying metal layer to a subsequently formed metal layer. The plasma treatment step creates open molecular bonds on the surface of the metal layer which cause the interface between the metal layer and the interlayer dielectric to become more adhesive. Thus, decreasing the likelihood of delamination that degrades the electrical reliability of the device.


Find Patent Forward Citations

Huff, Brett. (1999). In-situ pre-ild deposition treatment to improve ild to metal adhesion (U.S. Patent No. 5950107). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5950107

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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