The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 1999
Filed:
Feb. 18, 1998
Applicant:
Inventors:
Assignee:
Fujitsu Limited, Kanagawa, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 94 ; 257 96 ; 257 97 ; 257184 ; 257190 ; 257201 ; 257627 ; 257628 ; 438973 ;
Abstract
The present invention includes a process of growing a compound semiconductor layer locally, after applying radical particles that do not become an etchant of a compound semiconductor layer to an insulating mask so as to terminate the surface of the insulating mask in a state that the compound semiconductor layer is covered with the insulating mask, on the surface of the compound semiconductor layer exposed from the insulating mask.
Saito, Junji. (1999). Compound semiconductor device (U.S. Patent No. 5945690). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5945690
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile