The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1999
Filed:
May. 05, 1997
Applicant:
Inventors:
Julie Huang, Hsin-Chu, TW;
Shing-Long Lee, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co. Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438396 ; 438253 ; 438254 ; 438397 ; 438735 ; 438737 ; 438738 ;
Abstract
The present invention discloses a method for forming DRAM stacked capacitors by utilizing a densified oxide layer as an etch-stop for the wet etching process of an upper oxide layer in forming a contact hole for the stacked capacitor and thus, eliminating the need of a silicon nitride etch-stop layer and the occurrence of numerous processing difficulties normally observed in such stacked capacitor forming process. The lower oxide layer can be formed by a BPTEOS chemistry while the upper oxide layer can be formed by an ozone-TEOS chemistry.