The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1999
Filed:
Apr. 19, 1996
Chun-Yen Chang, Hsinchu, TW;
Tan-Fu Lei, Hsinchu, TW;
Hsiao-Yi Lin, Hsinchu, TW;
Juing-Yi Cheng, Hsinchu, TW;
National Science Council, Taipei, TW;
Abstract
Ultrahigh vacuum chemical vapor deposition (UHV/CVD) and chemical mechanical polishing (CMP) systems are used in a method which can fabricate polycrystalline silicon (poly-Si) and polycrystalline silicon-germanium (poly-Si.sub.1-x -Ge.sub.x) thin film transistors at low temperature and low thermal budget. Poly-Si and poly-Si.sub.1-x -Ge.sub.x can be deposited by UHV/CVD without any anneal step. And due to the ultra low base pressure and ultraclean growth environment, the As-deposited poly films have low defect densities. However, the surface morphology retards the usage of the fabricating top-gate poly TFT's. In this invention, the CMP system is used for improving the surface morphology, high performance poly-Si and poly-Si.sub.1-x -Ge.sub.x TFT's can be obtained.