The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1999
Filed:
Mar. 20, 1998
Katsunori Nishii, Osaka, JP;
Mitsuru Nishitsuji, Osaka, JP;
Takahiro Yokoyama, Hyogo, JP;
Akiyoshi Tamura, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A heterojunction epitaxial layer, including a first semiconductor layer containing Al and having a thickness of 50 nm or less and a second semiconductor layer different in composition from the first semiconductor layer, is formed on a substrate composed of semi-insulating GaAs. A gate electrode is formed on a specified region of the top surface of the heterojunction epitaxial layer. The source/drain formation regions of the heterojunction epitaxial layer are provided with respective high-concentration N-type impurity diffusion regions, on which respective ohmic electrodes are formed.