The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1999
Filed:
May. 27, 1997
Toshihiro Sekiguchi, Hidaka, JP;
Yoshitaka Tadaki, Hanno, JP;
Keizo Kawakita, Ome, JP;
Katsuo Yuhara, Ibaraki-ken, JP;
Kazuhiko Saito, Dallas, TX (US);
Shinya Nishio, Plano, TX (US);
Michio Tanaka, Richardson, TX (US);
Michio Nishimura, Plano, TX (US);
Toshiyuki Kaeriyama, Ibaraki-ken, JP;
Songsu Cho, Ibaraki-ken, JP;
Hitachi, Ltd., Tokyo, JP;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
In an embodiment of a method of manufacturing semiconductor integrated circuit devices according to the present invention, word lines are provided in a straight form, which serve as gate electrodes of two selecting MOSFETs formed symmetrical about a center portion of an active region surrounded by a LOCOS oxide film on a semiconductor substrate, and bit lines have straight segments and protruding segments. Each protruding segment is formed to protrude from the bit line and is connected through a first contact hole to a first semiconductor region formed at the center portion of the active region. The straight line segments and the protruding segments are formed separately by two separate exposure steps.