The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 1999

Filed:

May. 20, 1997
Applicant:
Inventors:

Masahiko Kobayashi, Kanagawa, JP;

Masahito Ishihara, Tokyo, JP;

Nobuyuki Takahashi, Kanagawa, JP;

Assignee:

Anelva Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
20429825 ; 20429807 ; 20429809 ; 20429815 ;
Abstract

A multichamber sputtering apparatus which is used for manufacturing a semiconductor device and the like. In the apparatus, a plurality of sputter chambers and a degas chamber are airtightly connected to and arranged around a center transfer chamber, and processes including sputtering are continuously conducted in a vacuum. A plurality of heat stages are disposed in the degas chamber so that a plurality of substrates are simultaneously heated. In each heat stage, as required, a heating gas introducing unit for introducing a heating gas with causing the heating gas to make contact with the rear face of the substrate, a pressing mechanism which presses the substrate against the heat stage so as to enhance the surface contact between the heat stage and the substrate, or an electrostatic chucking mechanism is disposed.


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