The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 1999
Filed:
Dec. 18, 1997
Applicant:
Inventors:
Mark I Gardner, Cedar Creek, TX (US);
Robert Paiz, Austin, TX (US);
Assignee:
Advanced Micro Devices, Austin, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438299 ; 438423 ; 438520 ; 438766 ;
Abstract
Generally, the present invention relates to a semiconductor device having a dual thickness gate dielectric along the channel and a process of fabricating such a device. By providing a dual thickness gate dielectric, the gate dielectric can, for example, be optimized to the transistor and device performance can be enhanced.
Gardner, Mark. (1999). Semiconductor device having dual gate dielectric thickness along the (U.S. Patent No. 5918133). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5918133
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile