The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 29, 1999

Filed:

Feb. 14, 1997
Applicant:
Inventors:

Michael J Colwell, Fremont, CA (US);

Teh-Kuin Lee, San Jose, CA (US);

Jane CT. Chiu, Sunnyvale, CA (US);

Abraham F Yee, Cupertino, CA (US);

Stanley Wen-Chin Yeh, Fremont, CA (US);

Gobi R Padmanabhan, Sunnyvale, CA (US);

Assignee:

LSI Logic Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257206 ; 257203 ; 257202 ; 257391 ; 257208 ;
Abstract

A gate array is disclosed having a programmable polysilicon layer which serves as both the gate electrodes for MOS transistors and routing lines for some connections between gate electrodes. The gate array structure is formed on a semiconductor substrate and has an array of identical base cells located in a core region of the structure. Each such base cell des the following elements: (1) a plurality of transistors, each of which includes a gate electrode; and (2) one or more gate connection strips formed on the substrate and electrically connecting selected gate electrodes of two or more of the transistors. Preferably, the gate connection strips are made from the same material as the selected gate electrodes (e.g., polysilicon) and are integrally connected therewith. The gate connection strips may patterned (i.e., programmed) to form substrate level routing between gates of various transistors.


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