The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 1999
Filed:
Apr. 24, 1997
Applicant:
Inventors:
Noboru Tokumasu, Tokyo, JP;
Kazuo Maeda, Tokyo, JP;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438623 ; 438789 ; 438790 ; 438784 ;
Abstract
A film forming method is provided for forming a planarized interlayer insulating film for covering interconnection layers, etc. of a semiconductor integrated circuit device. While supplying a reaction gas including a phosphorus containing compound which has III valence phosphorus and at least one bond of phosphorus to oxygen, a silicon containing insulating film including P.sub.2 O.sub.3 is formed on a deposition substrate, thereby greatly reducing fluidization temperature for planarization.
Published as:
EP0840366A2; JPH10135203A; KR19980032093A; TW345686B; EP0840366A3; US5915200A; JP2983476B2; EP0840366B1; DE69705915D1; DE69705915T2; KR100369427B1;