The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 1999
Filed:
Oct. 15, 1997
Choon Kun Ryu, Sunnyvale, CA (US);
Judy H Huang, Los Gatos, CA (US);
David Cheung, Foster City, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A planarized passivation layer is described. A planarized passivation layer of the present invention preferably includes a fluorosilicate glass (FSG) layer and a silicon nitride layer. The FSG layer is preferably deposited using triethoxyfluorosilane (TEFS) and tetraethoxyorthosilicate (TEOS). The inclusion of fluorine in the process chemistry provides good gap-fill characteristics in the film thus formed. The TEFS-based process employed by the present invention employs a low deposition rate, on the order of less than about 4500 .ANG./min, and preferably above 3000 .ANG./min, when depositing the FSG layer. The use of low deposition rate results in a positively sloped profile, preventing the formation of voids during the deposition of the FSG layer and the silicon nitride layer.