The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 1999
Filed:
Aug. 25, 1997
Matthias Passlack, Chandler, AZ (US);
Jonathan K Abrokwah, Tempe, AZ (US);
Ravi Droopad, Tempe, AZ (US);
Brian Bowers, Mesa, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method of fabricating a gate quality oxide-compound semiconductor structure includes forming an insulating Ga.sub.2 O.sub.3 layer on the surface of a compound semiconductor wafer structure by a supersonic gas jet containing gallium oxide molecules and oxygen. In a preferred embodiment, a III-V compound semiconductor wafer structure with an atomically ordered and chemically clean semiconductor surface is transferred from a semiconductor growth chamber into an insulator deposition chamber via an ultra high vacuum preparation chamber. Ga.sub.2 O.sub.3 deposition onto the surface of the wafer structure is initiated by a supersonic gas jet pulse and proceeds via optimization of pulse duration, speed of gas jet, mole fraction of gallium oxide molecules and oxygen atoms, and plasma energy.