The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 1999
Filed:
Jan. 17, 1997
Applicant:
Inventors:
Ming-Ren Lin, Cupertino, CA (US);
Peng Fang, San Jose, CA (US);
Donald L Wollesen, Saratoga, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438286 ; 438305 ;
Abstract
Asymmetrically doped source/drain regions of a transistor are formed employing protective insulating layers to prevent a portion of the gate electrode from receiving an excessive impurity implantation dose and penetrating through the underlying gate insulating layer into the semiconductor substrate. Sidewall spacers are employed during heavy implantation.
Lin, Ming-Ren. (1999). Method of forming asymmetrically doped source/drain regions (U.S. Patent No. 5904528). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5904528
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile