The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 1999

Filed:

Nov. 08, 1996
Applicant:
Inventors:

Hiroshi Kato, Tokuyama, JP;

Kazuhiko Hayashi, Tokuyama, JP;

Hiroyuki Kohno, Tokuyama, JP;

Assignee:

Tokuyama Corporation, Tokuyama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B / ;
U.S. Cl.
CPC ...
134-7 ; 134-13 ; 134-2 ; 51308 ; 451 38 ;
Abstract

A polishing slurry is formed of a silica-dispersed solution obtained by dispersing, in an aqueous solvent, a fumed silica having an average primary particle size of from 5 to 30 nm, the silica-dispersed solution exhibiting a light scattering index (n) of from 3 to 6 at a silica concentration of 1.5% by weight, and the fumed silica dispersed therein having an average secondary particle size of from 30 to 100 nm on the weight basis. The polishing slurry is produced by pulverizing, using a high-pressure homogenizer, a silica-dispersed solution obtained by dispersing a fumed silica in an aqueous solvent, so that the fumed silica possesses an average secondary particle size of from 30 to 100 nm on the weight basis. The polishing slurry is used for polishing semiconductor wafers and inter-layer dielectric in an IC process.


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