The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 1999

Filed:

Feb. 25, 1997
Applicant:
Inventors:

Clarence J Tracy, Tempe, AZ (US);

Eugene Chen, Gilbert, AZ (US);

Mark Durlam, Chandler, AZ (US);

Theodore Zhu, Chandler, AZ (US);

Saied N Tehrani, Tempe, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B32B / ;
U.S. Cl.
CPC ...
428693 ; 427131 ; 427132 ; 4286 / ; 4286 / ;
Abstract

A non-volatile magneto-resistive memory positioned on a semiconductor substrate is shielded from stray magnetic fields by a passivation layer partially or completely surrounding the non-volatile magneto-resistive memory. The passivation layer includes non-conductive ferrite materials, such as Mn--Zn-Ferrite, Ni--Zn-Ferrite, MnFeO, CuFeO, FeO, or NiFeO, for shielding the non-volatile magneto-resistive memory from stray magnetic fields. The non-conductive ferrite materials may also be in the form of a layer which focuses internally generated magnetic fields on the non-volatile magneto-resistive memory to reduce power requirements.


Find Patent Forward Citations

Tracy, Clarence. (1999). Stray magnetic shielding for a non-volatile mram (U.S. Patent No. 5902690). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5902690

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…