The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 1999
Filed:
Mar. 13, 1997
Applicant:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C / ;
U.S. Cl.
CPC ...
156657 ; 156653 ; 156656 ; 156643 ; 156662 ; 1566611 ;
Abstract
The present invention discloses a method for etching a silicon surface or forming alignment marks in a silicon substrate by first coating the substrate with an oxide layer, then depositing and patterning a photoresist layer on top of the oxide layer and forming the alignment marks by a dry etching process utilizing fluorine/oxygen etchant chemistry for the simultaneous etching of the two layers in a single process wherein the oxide layer prevents the contamination of the silicon wafer by any silicon particles formed.