The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1999
Filed:
May. 21, 1997
Chia Shiung Tsai, Hsin-Chu, TW;
Hun-Jan Tao, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present invention discloses a noel method for anchoring a via/contact or the forming of a capacitor having increasing capacitance in a semiconductor device by utilizing alternating layers of BPTEOS oxide and TEOS oxide and a deep UV photoresist such that toroidal-shaped cavities can be formed at the interfaces between the BPTEOS oxide layers and the TEOS oxide layers during the formation of the via/contact opening or the capacitor opening by a plasma etching process. The number of cavities formed, i.e., the number of anchors formed on the via/contact or capacitor, can be suitably adjusted by the number of BPTEOS oxide layer deposited on the semiconductor structure. Each BPTEOS oxide layer produces two anchors on the via/contact or the capacitor. The deep UV photoresist layer should contain a photo-acid-generator such that hydrogen ions are emitted when the photoresist layer is subjected to UV radiation and heating which accelerates the hydrogen ion generation process. The hydrogen ions generated combines with the fluorine contained in the oxide forming HF for etching away the interface between the two different oxide layers where boron ions and phosphorous ions are saturated at such interfaces.