The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 1999
Filed:
Feb. 13, 1997
Michihiko Takase, Neyagawa, JP;
Koji Eriguchi, Osaka, JP;
Bunji Mizuno, Ikoma, JP;
Masatoshi Arai, Ikoma, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor device with a damage-free insulating layer is fabricated. A method includes the steps of: forming a first insulating layer on a semiconductor substrate, forming a conductive layer on the first insulating layer, patterning the conductive layer to form a gate electrode, forming low-concentration source/drain region by a first ion implantation, removing a portion of the insulating layer positioned under the side end of the gate electrode, forming a second insulating layer over the semiconductor substrate, the second insulating layer is etched to form a sidewall, forming a high-concentration source/drain region by a second ion implantation.