The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 1999
Filed:
Oct. 20, 1997
David Watts, Austin, TX (US);
Rajeev Bajaj, San Jose, CA (US);
Sanjit Das, Austin, TX (US);
Janos Farkas, Austin, TX (US);
Chelsea Dang, Plugerville, TX (US);
Melissa Freeman, Round Rock, TX (US);
Jaime A Saravia, Round Rock, TX (US);
Jason Gomez, Austin, TX (US);
Lance B Cook, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method for chemical mechanical polishing (CMP) a copper layer (22) begins by forming the copper layer (22). The copper layer (22) is then exposed to a slurry (24). The slurry (24) contains an oxidizing agent such as H.sub.2 O.sub.2, a carboxylate salt such as ammonium citrate, an abrasive slurry such as alumna abrasive, an optional triazole or triazole derivative, and a remaining balance of a solvent such as deionized water. The use of the slurry (24) polishes the copper layer (22) with a high rate of removal whereby pitting and corrosion of the copper layer (22) is reduced and good copper interconnect planarity is achieved. This slurry (24) has good selectivity of copper to oxide, and results in copper devices which have good electrical performance. In addition, disposal of the slurry (24) is not environmentally difficult since the slurry (24) is environmentally sound when compared to other prior art slurries.