The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 1999
Filed:
Oct. 23, 1997
Applicant:
Inventors:
Minh V Ngo, Union City, CA (US);
Khanh Q Tran, San Jose, CA (US);
Terri J Kitson, San Jose, CA (US);
Lu You, Santa Clara, CA (US);
Simon S Chan, Saratoga, CA (US);
Jean Y Yang, Palo Alto, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438622 ; 438660 ; 438625 ; 438626 ; 438631 ;
Abstract
A patterned metal layer is gap filled with HSQ, an oxide formed thereon by PECVD, e.g., silicon dioxide derived from silane and N.sub.2 O, and planarized. The dielectric constant of the HSQ layer is minimized by baking the deposited HSQ layer in an inert atmosphere, e.g., N.sub.2, before heat soaking in an N.sub.2 O-containing atmosphere for no more than about 10 seconds and subsequent PECVD.