The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 1999

Filed:

Oct. 09, 1996
Applicant:
Inventors:

Der-Tsyr Fan, Hsinchu, TW;

Chon-Shin Jou, Hsinchu, TW;

Ting S Wang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438440 ; 438407 ;
Abstract

The present invention is a method for increasing the refresh time of DRAM. This invention is for decreasing the stress between the bird's beak of field oxide and silicon substrate by using fluorine ion implant before field oxidation and the optimal structure of LOCOS to effectively preventing the current leakage from the bird's beak of field oxide. Therefore, this invention can increase the refresh time of DRAM and greatly enhance the performance in DRAM.


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