The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 1999
Filed:
Oct. 23, 1997
Chia Shiung Tsai, Hsin-chu, TW;
Hun-Jan Tao, Hsin-chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for creating a tapered profile insulator shape, on an underlying silicon nitride layer, using a photoresist shape as a mask, has been developed. A two step dry etching procedure is used, featuring a first dry etching phase, using an etching chemistry comprised of argon, CHF.sub.3 and CF.sub.4, resulting in a tapered profile insulator shape, underlying the photoresist shape. A second dry etching phase, exhibiting high etch rate selectivity between insulator layer and underlying silicon nitride, via use of an etching chemistry comprised of argon, CHF.sub.3, CH.sub.2 F.sub.2, and CH.sub.3 F, is used to remove residual insulator layer from the underlying silicon nitride layer, without significant attack of the underlying silicon nitride layer.