The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 1999
Filed:
Jun. 18, 1997
Applicant:
Inventors:
Shing-Long Lee, Hsin-chu, TW;
Julie Huang, Chinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438738 ; 438734 ; 438743 ; 438756 ; 438666 ;
Abstract
A method is described which uses the differential etch behaviour of two different kinds of sequentially deposited silicon oxide layers in conjunction with controlled thicknesses and etching conditions to allow the etching of features such as via contact holes, oxide sidewalls, and crossover insulation edges to produce non-abrupt step height profiles for better edge coverage while still maintaining close adherence to minimum spacing design ground rules between adjacent features.
Lee, Shing-Long. (1999). Method for edge profile and design rules control (U.S. Patent No. 5877092). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5877092
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile