The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 1999
Filed:
Aug. 22, 1996
Applicant:
Inventors:
Shun-Liang Hsu, Mountain-Lake Village, TW;
Syun-Ming Jang, Hsin-Chu, TW;
Chang-Song Lin, Da-Chi Village, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438401 ; 438637 ; 438975 ;
Abstract
The contact or via hole etch pattern photomask used in fabrication of integrated circuits is modified to provide a series of grooves or trenches to be etched in the silicon oxide layer simultaneously with the contact or via holes. These trenches, after deposition and planarization of tungsten metal layer, afford regenerated alignment marks with sharply-defined edges even after deposition of a second conductive layer.
Hsu, Shun-Liang. (1999). Method for alignment mark regeneration (U.S. Patent No. 5872042). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5872042
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile