The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 1999
Filed:
Oct. 04, 1996
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for removing a metal-fluoropolymer residue from an integrated circuit structure within an integrated circuit. There is first provided an integrated circuit having formed therein a metal-fluoropolymer residue. The metal-fluoropolymer residue is formed from a first plasma etch method employing a fluorocarbon containing etchant gas composition within the presence of a conductor metal layer within the integrated circuit. The metal-fluoropolymer residue is then exposed to a second plasma etch method employing a chlorine containing etchant gas composition to form from the metal-fluoropolymer residue a chlorine containing plasma treated metal-fluoropolymer residue. Finally, the chlorine containing plasma treated metal-fluoropolymer residue is removed from the integrated circuit through a stripping method sequentially employing an aqueous acid solution followed by an organic solvent.