The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 1999
Filed:
Oct. 07, 1996
Saied N Tehrani, Tempe, AZ (US);
Eugene Chen, Gilbert, AZ (US);
Mark Durlam, Chandler, AZ (US);
Xiaodong T Zhu, Chandler, AZ (US);
Clarence J Tracy, Tempe, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method of fabricating GMR devices on a CMOS substrate structure with a semiconductor device formed therein. The method includes forming a dielectric system with a planar surface having a roughness in a range of 1 .ANG. to 20 .ANG. RMS on the substrate; disposing and patterning films of giant magneto-resistive material on the planar surface so as to form a memory cell; disposing a dielectric cap on the cell so as to seal the cell and provide a barrier to subsequent operations; forming vias through the dielectric cap and the dielectric system to interconnects of the semiconductor device; forming vias through the dielectric cap to the magnetic memory cell; and depositing a metal system through the vias to the interconnects and to the memory cell.