The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 1998
Filed:
Feb. 25, 1997
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A method for growing a high-quality single-crystalline semiconductor film on a substrate based on vapor phase growth while rotating the substrate and preventing micro-particles generated by a rotary drive unit from adhering onto the major plane of the substrate. The substrate 2 set inside the reaction chamber 21 is rotated using the rotary drive unit 7, a reaction gas 10 is fed to the major plane side of the substrate 2, a purge gas 3a is fed to the back space of the substrate in the reaction chamber 21 to replace a space 11a with a carrier gas atmosphere, where the rotary drive unit 7 is located in the purge gas discharge section 13, a purge gas discharge duct 12 is connected to the purge gas discharge section, and further to the purge gas discharge duct 12 is connected a gas flow controller 8, and serially in the downstream side thereof is connected an evacuation pump 9.