The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 1998
Filed:
Aug. 29, 1997
George O Saile, Poughkeepsie, NY (US);
Han-Chung Chen, Hsin-Chu-Hsien, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming a BPSG dielectric layer on a wafer without delamination in the fabrication of an integrated circuit device wherein a BPSG deposition chamber is used is described. Semiconductor device structures are provided in and on a semiconductor substrate. The BPSG deposition chamber is cleaned according to the following steps. The deposition chamber is cleaned using a fluorine-containing gas. The fluorine-containing gas is pumped out of the deposition chamber wherein residual fluorine-containing gas remains within the deposition chamber. A plasma is flowed into the deposition chamber wherein the plasma consumes all of the residual fluorine-containing gas. The plasma is purged from the deposition chamber to complete the cleaning of the BPSG deposition chamber. Thereafter, a layer of BPSG is deposited over the semiconductor device structures wherein the BPSG layer is deposited while the wafer is within the BPSG deposition chamber. The BPSG layer is flowed wherein no fluorine gas bubble is formed within the BPSG layer to complete the formation of the BPSG dielectric layer on the wafer without delamination in the fabrication of an integrated circuit device.