The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1998
Filed:
Jan. 31, 1997
Michael S Ameen, Phoenix, AZ (US);
Joseph T Hillman, Scottsdale, AZ (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A CVD apparatus is equipped with a cleaning gas source, selectively connectable to a gas inlet of the chamber of the apparatus, structure, to supply a gas mixture of hydrogen and argon in which the hydrogen content is between 20 percent and 80 percent by volume. A selectively operable 450 MHz MF energy source is coupled to the chamber to energize a plasma in gas. A selectively operable 13.56 MHz HF energy source, controllable independently of the MF energy source and connected between the wafer support and a chamber anode biases a wafer on the support to less than 100 volts, preferably 15 to 35 volts, negative. A heater heats the wafer to temperature about 550.degree. C. Preferably, a turbo molecular pump is used to pump the cleaning gas while maintaining a pressure of between 1 mTorr and 10 Torr and at a rate of from 3 to 12 sccm.