The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 1998

Filed:

Nov. 15, 1996
Applicant:
Inventors:

Tsutomu Atsuki, Omiya, JP;

Tadashi Yonezawa, Omiya, JP;

Katsumi Ogi, Omiya, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B / ; C23C / ; B05D / ;
U.S. Cl.
CPC ...
10628718 ; 427226 ; 501134 ;
Abstract

A composition for forming a film, comprising a solution of metal compounds in an organic solvent, wherein a molar ratio of metals in said solution is (Sr.sub.1-n R.sub.n):Bi:(Ta.sub.Y Nb.sub.1-Y)=X:Q:2, R is at least one element selected from the group consisting of La, Ce, Pr, Nd, Eu, Sm, Tb, Gd and Er, and 0<n.ltoreq.0.1, 0.4.ltoreq.X<1, 0.ltoreq.Y.ltoreq.1 and 1.5.ltoreq.Q.ltoreq.3.5, can be used to form a ferroelectric film. This ferroelectric film is useful in a ferroelectric capacitor, particularly a ferroelectric capacitor for a non-volatile memory.


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Atsuki, Tsutomu. (1998). Bi-based ferroelectric composition and thin film, method for forming the (U.S. Patent No. 5833745). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5833745

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