Avoid photoresist lifting by post-oxide-dep plasma treatment

Abstract

A new method to improve the adhesion of a photoresist layer to an underlying dielectric layer in the fabrication of integrated circuit devices is described. Semiconductor device structures are provided in and on a semiconductor substrate. A dielectric layer is deposited over the semiconductor device structures wherein the depositing is performed in a deposition chamber. The dielectric layer is treated with a N.sub.2 O plasma treatment while the substrate is still within the deposition chamber. The substrate is removed from the deposition chamber. A photoresist mask is formed over the dielectric layer with an opening above the semiconductor device structures to be electrically contacted wherein the plasma treatment improves adhesion of the photoresist mask to the dielectric layer when compared to a conventional integrated circuit device. A contact opening is etched through the dielectric layer not covered by the mask to the semiconductor device structures to be electrically contacted. A conducting material is deposited within the contact opening completing the electrical contact in the fabrication of the integrated circuit device.