The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 1998
Filed:
May. 22, 1996
Mitsubishi Materials Corporation, Tokyo, JP;
Abstract
Dielectrics represented by (Sr.sub.x Bi.sub.1-x)Bi.sub.2 Ta.sub.2 O.sub.y, wherein 0<x<1, and y represents the total number of oxygen atoms bonded to the respective metals, and thin films thereof, can be prepared by repeating the steps of applying compositions for forming the Sr--Bi--Ta--O-based dielectric thin films on substrates, drying and conducting a first-firing a plurality of times until the desired film thickness is achieved, and then conducting a second-firing for crystallization and compositions for forming Bi-based ferroelectric thin films and target materials for forming Bi-based ferroelectric thin films, both represented by the metal composition ((Sr.sub.a (Ba.sub.b, Pb.sub.c)).sub.x Bi.sub.y (Ta and/or Nb).sub.z wherein 0.4.ltoreq.X<1.0, 1.5.ltoreq.Y.ltoreq.3.5, Z=2, 0.7X.ltoreq.a<X, and 0<b+c.ltoreq.0.3X can be formed by repeatedly applied onto substrates, dried and subjected to a first-firing a plurality of times until the desired film thickness is achieved, and then subjected to a second-firing for crystallization, while the target materials are used to form films by sputtering, and the films undergo heat treatment during and/or after their formation for crystallization.