The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 1998

Filed:

Apr. 14, 1997
Applicant:
Inventors:

Bernhard Fiegl, Wappingers Falls, NY (US);

Walter Glashauser, Deisenhofen, DE;

Max G Levy, Wappingers Falls, NY (US);

Victor R Nastasi, Hopewell Junction, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438424 ; 438430 ; 438435 ;
Abstract

A method of isolation in silicon integrated circuit processing overfills the trench by a fill margin, deposits a temporary layer of poly having a thickness less than the trench depth by the thickness of an oxide polish stop, so that the top of the polish stop is coplanar with the top of the fill layer outside the trench; the temporary layer is polished outside the trench, using the fill layer and the polish stop layer as polish stops; the polish stop layer is removed together with the same thickness of the fill layer and temporary layer, preserving planarity that is destroyed by selectively etching the fill layer; the remaining temporary layer is stripped and a final touch up polish of the fill layer stops on the pad nitride.


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