The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 1998
Filed:
May. 19, 1997
Applicant:
Inventors:
Mamoru Nakasuji, Yokohama, JP;
Shintaro Kawata, Ibaragi-ken, JP;
Assignee:
Nikon Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430-5 ; 430296 ;
Abstract
Charged-particle beam masks are disclosed that comprise a plurality of mask subfields separated by a plurality of boundary regions. The subfields are formed in a scattering layer deposited on a membrane. The membrane is supported by a support structure provided in proximity to the boundary regions. In one embodiment, the support structure comprises a plurality of support beams, parallel to each other, and preferably formed by anisotropically etching a silicon wafer. A boron-doped layer of the silicon wafer forms the membrane.