The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 1998

Filed:

Jun. 18, 1996
Applicant:
Inventors:

Chung-You Hu, Sunnyvale, CA (US);

Yu Sun, Saratoga, CA (US);

Chi Chang, Redwood City, CA (US);

Sameer Haddad, San Jose, CA (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ; H01L / ;
U.S. Cl.
CPC ...
36518517 ; 36518528 ; 36518505 ; 36518526 ; 36518501 ;
Abstract

The present invention facilitates programming of selected floating gate devices while successfully inhibiting the programming of unselected devices, without the need for growing multiple thicknesses of oxides. The preferred embodiment of the present invention utilizes a multiple select gate device. In particular, the select gate device is preferably a dual floating gate device rather than the conventional transistor (or device functioning as a conventional transistor) used in the current Flash memory systems as a select gate device.


Find Patent Forward Citations

Hu, Chung-You. (1998). Using floating gate devices as select gate devices for nand flash memory (U.S. Patent No. 5793677). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5793677

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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