The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 1998
Filed:
Sep. 02, 1997
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438624 ; 438626 ; 438631 ; 438699 ; 438723 ; 438903 ; 438763 ;
Abstract
A planarization process, featuring removal of spin on glass, used to fill narrow spaces between metal lines, has been developed. A dual dielectric, of underlying silicon oxide, and overlying silicon nitride, are initially used to passivate the metal lines, followed by the spin on glass fill. A RIE etchback of the spin on glass proceeds to a point in which the silicon nitride, on the metal line, is exposed. The exposed silicon nitride is then removed leaving a silicon oxide passivated metal line, and seamless insulator filled spaces. The ability of not exposing the passivating silicon oxide to RIE echback process, allows seamless fills to result.