The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 1998
Filed:
Aug. 30, 1993
Applicant:
Inventor:
Tatsuo Nakato, Vancouver, WA (US);
Assignees:
Sharp Microelectronics Technology, Inc., Camas, WA (US);
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438162 ; 438285 ; 438412 ; 438407 ;
Abstract
A method for fabricating a GeSi/Si/SiO.sub.2 heterostructure comprises the steps of: (a) providing a monocrystalline Si substrate; (b) defining a GeSi region within the Si substrate while leaving a Si cap overlying the GeSi region, the Si cap being an integral part of the monocrystalline substrate; and (c) oxidizing part of the Si cap to thereby produce the GeSi/Si/SiO.sub.2 heterostructure.