The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 1998
Filed:
Sep. 09, 1996
Mitsubishi Materials Corporation, Tokyo, JP;
Abstract
High-purity MTiO.sub.3 (M=Sr and/or Ba)-type dielectric thin films with improved electric characteristics, particularly leakage currents and dielectric breakdown voltages, are prepared by MOCVD. Either or both a high-purity bis (.beta.-diketonato) Sr and Ba complexes, which each contain 1 ppm or less of each alkali metal and an alkaline earth metal as impurity metals, are used as the metal M supply sources. The high-purity volatile complexes are prepared by heat decomposition Sr or Ba nitrate (or acetate), which has been purified by a combination of recrystallization and ion-exchange chromatography, to contain 1 ppm or less of each alkali metal and alkaline earth metal as impurity metals, to thereby prepare high-purity SrO or BaO. The SrO or BaO is then reduced to high-purity metallic Sr or Ba by the thermit process, and then the metallic Sr or Ba is reacted with a .beta.-diketone to form the bis(.beta.-diketonato) complexes.