The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1998
Filed:
Sep. 07, 1995
Applicant:
Inventors:
Takehisa Sakurai, Kusatsu, JP;
Hitoshi Ujimasa, Higashiosaka, JP;
Katsuhiro Kawai, Yamatotakada, JP;
Atsushi Ban, Nara, JP;
Masaru Kajitani, Osaka, JP;
Mikio Katayama, Ikoma, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438719 ; 438738 ;
Abstract
In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chlorine gas.