The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1998
Filed:
Dec. 07, 1995
Hsin-Pai Chen, Hsin-chu, TW;
Dong-Shiuh Cheng, Hsin-chu, TW;
Taiwan Semiconductor Manufacturing Company Ltd., Hsin-Chu, TW;
Abstract
A method is described whereby a wafer having a layer of photoresist on its surface, can be subjected to ion implantation just prior to examination by a scanning-electron-microscope(SEM) thereby rendering the photoresist sufficiently conductive that charging of the surface does not occur within the SEM. Accumulation of surface charge on specimens in the SEM causes gross image distortion and obliteration. The technique is particularly useful for inspecting a developed photoresist layer on an insulating layer such as silicon oxide prior to oxide etching. Such is the case when the wafer is being inspected for photoresist quality and pattern dimensions prior to contact opening. The resist mask is developed and subjected to a low dosage ion implant. Images are rendered crisp and clear allowing for accurate measurements. The ability to test the photo pattern at this point is cost effective in that it permits the option of photoresist re-work, and lessens the need for a post-etch inspection.